Organic Solid-State Electrolyte Synaptic Transistors with Photoinduced Thiol–Ene Cross-linked Polymer Electrolytes for Deep Neural Networks
Journal
ACS Materials Letters
Journal Volume
7
Journal Issue
2
Start Page
682
End Page
691
ISSN
2639-4979
2639-4979
Date Issued
2025-02-03
Author(s)
Qun-Gao Chen
Wei-Ting Liao
Rou-Yi Li
Ignacio Sanjuán
Ning-Cian Hsiao
Chan-Tat Ng
Ting-Ting Chang
Antonio Guerrero
Wen-Ya Lee
Abstract
In this work, we describe a solid-state polymer electrolyte (SPE)-based electrolyte-gated organic field-effect transistors (EGOFETs) consisting of a thiol-ene-assisted photo-cross-linked nitrile butadiene rubber (NBR) network embedded with lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) electrolyte. The photocurable SPE film can be patterned with different dimensions by photolithography and exhibits excellent electronic properties and crucial synaptic behavior. The photocurable NBR/LiTFSI EGOFET exhibits a high transconductance of 11.9 mS and a high on/off ratio of 105 at a scan rate of 40 mV/s. Due to the strongly polarized nature of the photo-cross-linked NBR network and Li-ion diffusion, the NBR/LiTFSI device exhibits a significant current hysteresis, enabling synaptic-like learning and memory behavior. The NBR/LiTFSI device demonstrates a DNN of 91.9% handwritten digit recognition accuracy. This work demonstrates the potential of the solid-state NBR/LiTFSI EGOFET in creating highly efficient and low-energy neuromorphic devices.
Publisher
American Chemical Society (ACS)
Type
journal article