Fabrication of p-type transparent conducting oxide thin films and investigation of its optical and electrical properties
Date Issued
2008
Date
2008
Author(s)
Liu, Shuo-Hang
Abstract
In nature, glass is the representative of the transparent substance; metal is the typical conducting material. Therefore, a matter exhibits both transparent and good electrical conducting properties is what so called “transparent electrode”. Transparent conducting oxide is extensively applied to the semiconductor and photovoltaic industry, such as flat-panel displays, thin film solar cells, touch panels, and light-emitting diode. We tested several kinds of process parameters to obtain good quality CuAlO2 thin films using custom-made CuAlO2 ceramic targets and RF sputtering method. Under a fixed target-to-substrate distance (7cm), influence of several kinds of parameters on electrical and optical properties, such as the RF power (P), DC bais (V) of the substrate, O2 flow (S) were investigated. All magnetron sputtering-deposited CuAlO2 in this study exhibits amorphous structure. We improved the conductivity of the films by additional doping (Ca).Best film was obtained using the following fabrication process parameters: 10 at% Ca doping target ,RF power of 120W, no DC bias, and oxygen ratio [O2/(O2+Ar2)] of 1/3. Out best achieved resistivity is 60.39 Ohm-cm; and the best averaged transmittance is about 60% within the wavelength range of visible light for film of 157 nm thickness.
Subjects
p type
transparent conducting oxide
sputtering
SDGs
Type
thesis
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