Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
Details
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
Journal
OSA Trends in Optics and Photonics Series
Journal Volume
96 A
Pages
1607-1608
Date Issued
2004
Author(s)
CHIH-CHUNG YANG
Cheng, Y.-C.
Lin, E.-C.
Chen, M.-K.
Wu, C.-M.
Yang, C.C.
Ma, K.-J.
CHIH-CHUNG YANG
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-33645211579&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/307818
Type
conference paper