Novel ultra thin gate oxide growth technique by alternating current anodization
Resource
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Journal
6th International Conference on Solid-State and Integrated-Circuit Technology, 2001
Pages
-
Date Issued
2001-10
Date
2001-10
Author(s)
DOI
N/A
Abstract
Ultra-thin gate oxides prepared by the novel anodic oxidation technique of using direct-current (DC), alternating-current (AC), and direct-current with ac oscillation (DAC) as anodization voltages are studied. After suitable high temperature anneal in N2, these anodic oxides (ANO) show improved uniformity in electrical characteristics with respect to conventional rapid thermal oxides. Smaller leakage current and higher breakdown endurance are observed for these ANO oxides. Specially, DAC-ANO oxides present a further improved breakdown performance than the other oxides. Further, anodization is carried out with N-type Si (ANO-Si) replacing Pt as the cathode. ANO-Si oxides demonstrate even preferable reliability and superior electrical uniformity. © 2001 IEEE.
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Type
journal article
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