Experimental demonstration for the implant-free In0.53Ga 0.47As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance
Journal
Applied Physics Letters
Journal Volume
103
Journal Issue
7
Date Issued
2013
Author(s)
Abstract
In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10-9 Ω/cm2 by inserting 0.6 nm ZnO between Al and indium gallium arsenide (Si: 1.5 × 1019 cm -3). The metal-insulator-semiconductor tunneling diode with 0.6 nm ZnO exhibits nearly zero (0.03 eV) barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga 0.47As quantum-well metal-oxide-semiconductor field-effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10-4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω μm. © 2013 AIP Publishing LLC.
SDGs
Type
journal article