MBE-grown CdZnO/ZnO Multiple Quantum-well Light-emitting Diode on MOCVD-grown p-type GaN
Journal
IEEE Photonics Technology Letters
Journal Volume
24
Journal Issue
11
Pages
909-911
Date Issued
2012-06
Author(s)
Shao-Ying Ting
Horng-Shyang Chen
Wen-Ming Chang
Jeng-Jie Huang
Che-Hao Liao
Chih-Yen Chen
Chieh Hsieh
Yu-Feng Yao
Hao-Tsung Chen
Abstract
A CdZnO/n-ZnO multiple-quantum-well (QW) light-emitting diode (LED), with the QWs and -ZnO capping layer grown with molecular beam epitaxy on p-GaN, which is grown with metal–organic chemical vapor deposition, is fabricated and characterized. Because of the weak carrier localization mechanism in the ZnO-based LED, its defect emission is quite strong and dominates the LED output when injection current is low. The blue shift of the LED output spectrum in applying a forward-biased voltage and the large blue-shift range in increasing injection current show the different behaviors of such a ZnO-based LED from those of a nitride LED.
SDGs
Type
journal article