Modified Silicon nanotips with improved carrier lifetime by using solution process for efficient solar cells applications
Journal
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Date Issued
2015
Author(s)
Abstract
In this work, a simple solution process (metal-assisted wet chemical etching [MacEtch] method) is used to fabricate high-density silicon nanohole (SiNH) arrays on n-type wafer. SiNH arrays generally produce a large surface-area-to-volume ratio, so that aid for strong light trapping effect between the nanostructures causes high absorption and charge collection via the formation of a core-sheath p-n junction. However, the photogenerated excited carriers are easily trapped by high-density surface defects due to higher surface area prolonging to depth of nanohole (NH). To reduce the surface defects and metal contamination of SiNHs formed by metal-catalyst etching, it is important to further proceed to feasible simple solution treatment. Applying the chemical polishing etching (CPE) treatment to SiNH surface leads to smooth and contamination-free surface. In addition, all the processes mentioned here are energy and cost-efficient.
SDGs
Type
conference paper