Optimization of sputter deposition parameters for magnetostrictive Fe62Co19Ga19/Si (100) films
Resource
Journal of Applied Physics, 111(7), 07A939
Journal
Journal of Applied Physics
Pages
07A939
Date Issued
2012
Date
2012
Author(s)
Jen, S.U.
Tsai, T.L.
Abstract
A good magnetostrictive material should have large saturation magnetostriction ( S) and low saturation (or anisotropy) field (H S), such that its magnetostriction susceptibility (S H) can be as large as possible. In this study, we have made Fe 62Co 19Ga 19Si(100) nano-crystalline films by using the dc magnetron sputtering technique under various deposition conditions: Ar working gas pressure (p Ar) was varied from 1 to 15 mTorr; sputtering power (P w) was from 10 to 120 W; deposition temperature (T S) was from room temperature (RT) to 300°C, The film thickness (t f) was fixed at 175 nm. Each magnetic domain looked like a long leaf, with a long-axis of about 12-15 μm and a short-axis of about 1.5 μm. The optimal magnetic and electrical properties were found from the Fe 62Co 19Ga 19 film made with the sputter deposition parameters of p Ar 5 mTorr, P w 80 W, and T S RT. Those optimal properties include λ S 80 ppm, H S 19.8 Oe, S H 6.1 ppmOe, and electrical resistivity ρ = 57.0μω cm. Note that S H for the conventional magnetostrictive Terfenol-D film is, in general, equal to 1.5 ppmOe only. © 2012 American Institute of Physics.
Type
journal article
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