DC and AC Analysis of Dual Material Double Gate SOI MOS Device
Date Issued
2006
Date
2006
Author(s)
Huang, Rai-Min
DOI
zh-TW
Abstract
This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device.
In chapter 1, we make an introduction for SOI device and describe its evolution from bulk device and propose a new structure called dual-material double-gate fully-depleted silicon on insulator MOS device.
In chapter 2, we discuss the DC phenomenon of a 100nm DMDG FD SOI MOS device with the N+ poly top gate and different ratio N+/P+ poly bottom gate and different thin film doping.
In chapter 3, we discuss the capacitance phenomenon of a 100nm DMDG FD SOI MOS device with the N+ poly top gate and different ratio N+/P+ poly bottom gate and different thin film doping.
Subjects
雙材料
雙閘極
電容
dual material
double gate
capacitance
Type
thesis
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