Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition

Journal

IEEE Transactions on Electron Devices

Journal Volume

67

Journal Issue

11

Pages

5053-5058

Date Issued

2020

Author(s)

Tsai, C.-E.

Lu, F.-L.

Liu, Y.-C.

Ye, H.-Y.

DOI

10.1109/TED.2020.3019977

URI

https://www.scopus.com/inward/record.url?eid=2-s2.0-85095721235&partnerID=40&md5=25146643870054e775f0088169c455fd

https://scholars.lib.ntu.edu.tw/handle/123456789/549175

Type

journal article