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College of Science / 理學院
Applied Physics / 應用物理研究所
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
Details
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
Journal
Applied Physics Letters
Journal Volume
68
Journal Issue
25
Pages
3605-3607
Date Issued
1996
Author(s)
Passlack, M
MINGHWEI HONG
Mannaerts, JP
Kwo, JR
Tu, LW
DOI
10.1063/1.116652
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/323230
SDGs
[SDGs]SDG9
Type
journal article
