Spin accumulation and magnetotransport in NiFeAlNiFe single-electron transistors
Journal
Journal of Applied Physics
Journal Volume
103
Journal Issue
7
Date Issued
2008
Author(s)
Abstract
Spin accumulation effect and anomalous magnetoresistance resulting in spin dependent transport in NiFe∕Al∕NiFe single-electron transistors have been studied. The magnetic tunneling process is strongly influenced by the charging energy and a superconducting gap. The magnetoresistance is enhanced with decreasing bias voltage. In addition, a suppressed superconducting gap caused by spin accumulation was experimentally demonstrated. For higher bias voltage, the spin accumulation induced by the spin-valve effect is seen as periodic oscillation in a Coulomb blockade region. Below the critical voltage, which is the sum of the superconducting gap and charging energy, spin accumulation can suppress the superconductivity and induce anomalous magnetoresistance.
SDGs
Type
journal article