Run-to-run control of CMP process considering aging effects of pad and disc
Resource
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium
Journal
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Pages
-
Date Issued
1999-10
Date
1999-10
Author(s)
Abstract
CMP processes are known to be erratic and unstable. A simple control strategy is to predict the run-To-run process removal rate and then adjust the processing time based on the prediction. EWMA and PCC techniques are two most often used prediction techniques. In this work, we revise the PCC design to take into account the ages of the abrasive pad and conditioning disc. It is shown that the proposed age-based technique can significantly improve the prediction capability and, thus, the control efficiency over conventional techniques. © 1999 IEEE.
Other Subjects
Chemical mechanical polishing; Forecasting; Manufacture; Semiconductor device manufacture; Aging of materials; Chemical polishing; Process control; Aging effects; Control efficiency; Control strategies; Conventional techniques; Prediction capability; Prediction techniques; Processing time; Run-to-run control; Process control; Semiconductor device manufacture; Chemical-mechanical polishing (CMP); Exponentially weighted moving average (EWMA)
Type
conference paper
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