Photoluminescence study of hydrogen passivation in GaAs and AlGaAs by the photochemical vapor deposition system
Journal
Applied Physics Letters
Journal Volume
57
Journal Issue
1
Pages
70-72
Date Issued
1990
Author(s)
Abstract
It is shown for the first time that hydrogen passivation can be made by using a photochemical vapor deposition system. Unlike the common methods, this new method of hydrogenation has no electron or ion bombardment, thus the sample surface will not be damaged during processing. The effects of hydrogenation are confirmed by the enhancement of photoluminescence intensity. A strong increase in the luminescence intensity (a factor of 23) has been observed which is comparable to the results of rf glow discharge systems.
SDGs
Type
journal article