(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power Applications
Resource
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 12, DECEMBER 2001
Journal
IEEE Transactions on Electron Devices
Journal Volume
VOL. 48
Journal Issue
NO. 12
Pages
-
Date Issued
2001-12
Date
2001-12
Author(s)
DOI
246246/200611150121214
Abstract
The quaternary (Al Ga1 )0 5In0 5P (0 1)
compounds on GaAs substrates are important materials used
as a Schottky layer in microwave devices. In this report, we
systematically investigated the electrical properties of quaternary
(Al Ga1 )0 5In0 5P materials and concluded that the best composition
for improving the device performance is by substituting
30% ( = 03) of Ga atoms for Al atoms in GaInP material.
The Schottky barrier heights ( ) of (Al Ga1 )0 5In0 5P
layers were 0 85 1 00 eV. We successfully realized the
(Al Ga1 )0 5In0 5P/In0 15Ga0 85As ( = 00 3 1 0)
doped-channel FETs (DCFETs) and demonstrated excellent dc,
microwave, and power characteristics.
Subjects
AlGaInP
doped-channel FET
rf power performance
Publisher
Taipei:National Taiwan University Dept Mech Engn
Type
journal article
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