Top-Gated P-MOSFET with CVD-Grown WSe2 Channels via Self-Aligned WOx Conversion for Spacer Doping
Journal
Nano Letters
Journal Volume
25
Journal Issue
17
Start Page
7037
End Page
7043
ISSN
1530-6984
1530-6992
Date Issued
2025-04-15
Author(s)
Li, Meng-Zhan
Hung, Terry Y. T.
Yun, Wei-Sheng
Sathaiya, D. Mahaveer
Chou, Sui-An
Liew, San Lin
Yang, Ying-Mei
Lin, Kuang-I
Lee, Tung-Ying
Cheng, Chao-Ching
Wu, Chung-Cheng
Radu, Iuliana P.
Abstract
WOx conversion for doping is highlighted in recent advancements in WSe2 p-FETs. While past studies focused on exfoliated WSe2 flakes, our research examines CVD-grown WSe2 films, assessing the impact of this doping on channel mobility and contact resistance in devices. Our approach enables effective threshold voltage tuning in both n- and p-type FETs with various low-dimensional material channels with the doping mechanism well captured by TCAD simulations. When applied to WSe2, trilayer devices exhibited a good and comparable median field-effect mobility of 65 cm2/V·s following the conversion process. Consequently, trilayer WSe2 was used to demonstrate top-gated p-MOSFETs via self-aligned WOx conversion in the spacer region, achieving a 250-fold enhancement in the on-current while maintaining a subthreshold swing of 80 mV/dec. Our findings provide a comprehensive understanding of WOx conversion and its general applicability, paving the way for its use in future logic devices with low-dimensional materials.
Subjects
converted tungsten oxide
low-dimensional materials
MOSFET
p-doping
self-aligned
WSe2
Publisher
American Chemical Society (ACS)
Type
journal article