Studies of far-infrared magneto-photoconductivity of D- centers in GaAs/AlxGa1-xAs multiple quantum wells
Journal
Solid State Communications
Journal Volume
112
Journal Issue
12
Pages
675-680
Date Issued
1999
Author(s)
Abstract
We present magneto-photoconductivity studies on GaAs/Al0.3Ga0.7As multiple quantum wells selectively doped with Si donors in the center of the wells and in the barrier layers. Under extra illumination of an He-Ne laser, dramatic results of the D- centers were observed as a function of the electron density. A band-bending model associated with a 'barrier D- center' configuration was used to analyze the evolution of the binding energy of the spin-singlet D- transition and magnetic vaporization.
SDGs
Type
journal article