Selective growth of silicon nanowires on glass substrate with an ultrathin a-Si:H layer
Journal
Electrochemical and Solid-State Letters
Journal Volume
13
Journal Issue
4
Pages
K29-K31
Date Issued
2010
Author(s)
Hsueh, H.T.
Hsueh, T.J.
Chang, S.J.
Hung, F.Y.
Hsu, C.L.
Weng, W.Y.
Liu, C.W.
Lee, Y.H.
Dai, B.T.
Abstract
High density silicon nanowires (SiNWs) were selectively grown on a Cr/glass template with a very thin 5 nm thick a-Si:H layer at by a vapor–liquid–solid process using Au–Si nanoparticles as catalysts. SiNWs cannot be grown without the a-Si:H layer. Field emitters using these SiNWs were also fabricated. The threshold field of the fabricated field emitters was . Furthermore, the field enhancement factor, β, of the fabricated SiNW field emitter was around 1700.
Type
journal article