Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric
Journal
Journal of Crystal Growth
Journal Volume
251
Pages
837-842
ISBN
10.1016/S0022-0248(02)02273-X
Author(s)
Yang, B.
Ye, P.D.
Kwo, J.
Frei, M.R.
Gossmann, H.-J.L.
Mannaerts, J.P.
Sergent, M.
Ng, K.
Bude, J.
Type
conference paper