A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade
Journal
2017 Silicon Nanoelectronics Workshop, SNW 2017
Journal Volume
2017-January
Pages
49-50
Date Issued
2017
Author(s)
Abstract
We propose a novel vertical tunnel FET of band-to-band tunneling aligned with the gate electric field. Simulation results show high drive current and extremely sharp subthreshold swing due to excellent gate control over the tunnel junction. OFF state leakage via source-to-drain tunneling is much suppressed by the spacer layer between the source and drain layers. Furthermore, this device is fully compatible to VLSI technology.
SDGs
Type
conference paper