Mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers
Journal
Applied Physics Letters
Journal Volume
84
Journal Issue
9
Pages
1480-1482
Date Issued
2004
Author(s)
Abstract
The mechanism of enhanced luminescence in In xAl yGa 1-x-yN quaternary epilayers was discussed. To study the correlation between optical and structural properties in the alloy, photoluminescence, Raman scattering and field emission scanning electron microscopy (SEM) measurements were employed. The existence of InGaN-like nanostructure were established, which was responsible for the luminescence in Al alloy. Result shows a model system to demonstrate a defective alloy which exhibited a strong emission at room temperature.
Other Subjects
Band gap;Piezoelectric fields;Backscattering;Cathodoluminescence;Energy dispersive spectroscopy;Epitaxial growth;Light emitting diodes;Phonons;Scanning electron microscopy;Transistors;X ray diffraction analysis;Semiconducting aluminum compounds
Type
journal article