Adjustment of Abrupt Drops in the C-V Curves of Various 4H-SiC MOSFETs and JBS Diodes
Journal
IEEE Electron Device Letters
Start Page
1-1
ISSN
0741-3106
1558-0563
Date Issued
2024
Author(s)
DOI
10.1109/LED.2024.3522278
Abstract
This study demonstrates the corresponding voltages to the abrupt drops in the C-V curves of the planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and junction barrier Schottky (JBS) diodes without the P-pillar beneath the P-type region can be adjusted by designing the concentrations and structures of P-type regions, N-type junction field-effect transistor (JFET) regions, and N-type drift regions. When the concentrations of the upper N-type regions are much higher than those of the lower N-type regions and the widths are narrower than those of the N-type region beneath, both the C-V curves of MOSFETs and JBS diodes show abrupt drops. From the measured results, the abrupt drop of the JBS diode becomes relatively steep and obvious when the concentration of the upper N-type region is 5 times higher than that of the lower N-type region in this study. The simulation results of the MOSFETs with multiple (equal to or more than 3) P- and N-type regions also demonstrate the multiple abrupt drops in the C-V curve under the above-mentioned conditions. The critical values of the concentrations and widths are decided in this study only. Additionally, the measured and simulated switching waveforms show when the Vds corresponding to the abrupt drop decreases, the reverse recovery time (trr) is shortened, and turn-on energy loss (Eon) may be reduced.
Subjects
4H-SiC
C-V
Deep Pbase
Drain to source capacitance
MOSFET
Output capacitance
SDGs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article