Strain Relaxed GaN/InGaN Nanorod Light Emitting Arrays
Journal
ECS Transactions
Date Issued
2008
Author(s)
Abstract
We present a practical top-down etch process to fabricate InGaN/GaN multiple quantum well nanorod structure. By using nature lithography to define nanostructure, and a space layer to prevent p-type contact from connecting n-type GaN, the nanorod light emitting diode array is realized. The quantum confine stark effect is suppressed in nanorod LEDs which is indicated by their nearly constant electroluminescence peak wavelength at the injection current range between 25mA and 100mA. Furthermore, Raman measurement confirms strain relaxation between lattice mismatch layers of such a nanostructure.
Type
conference paper