Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates
Journal
Optics Express
Journal Volume
21
Journal Issue
24
Pages
30065-30073
Date Issued
2013
Author(s)
CHIEH-HSIUNG KUAN
Su, V.-C.
Chen, P.-H.
Lin, R.-M.
Lee, M.-L.
You, Y.-H.
Ho, C.-I.
Chen, Y.-C.
Chen, W.-F.
CHIEH-HSIUNG KUAN
Abstract
This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting diodes (LEDs) on the nano-sized patterned c-plane sapphire substrates (PCSSs) with reducing the space. The efficiency droop is also determined by QCSE. As verified by the experimentally measured data and the ray-tracing simulation results, the suppressed efficiency droop for the InGaN-based LED having the nano-sized PCSS with a smaller space of 200 nm can be acquired due to the weaker function of the QCSE within the MQWs as a result of the smaller polarization fields coming from the lower compressive strain in the corresponding epitaxial layers.
Type
journal article