High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
Journal
Applied Physics Letters
Journal Volume
92
Journal Issue
11
Pages
111914-1 - 111914-3
Date Issued
2008
Author(s)
Abstract
High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics.
Other Subjects
Energy gap; Molecular beam epitaxy; Nitridation; Photoluminescence; Sapphire; X ray diffraction analysis; Zinc; High-phase-purity zinc-blende; Ultrathin crystallized interlayer; Thin films
Publisher
American Institute of Physics
Type
journal article