Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
Journal
Applied Physics Letters
Journal Volume
98
Journal Issue
10
Pages
9901
Date Issued
2011
Author(s)
Lin, CA
Type
journal article