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College of Science / 理學院
Applied Physics / 應用物理研究所
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
Details
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
Journal
2007 International Semiconductor Device Research Symposium
Date Issued
2007
Author(s)
Chen, Chih-Ping
Lin, Tsung-Da
Chang, Yao-Chung
MINGHWEI HONG
Kwo, J Raynien
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/331377
Type
book chapter