Reactivation Mechanisms for Shallow Impurities in Hydrogenated Crystalline Silicon

Resource

CHINESE JOURNAL OF PHYSICS, VOL. 29, NO. 3

Journal

Chinese Journal of Physics

Journal Volume

VOL. 29

Journal Issue

NO. 3

Pages

-

Date Issued

1991-06

Date

1991-06

Author(s)

DOI

20060927115937867924

URI

Publisher

臺北市:國立臺灣大學物理系所

Type

journal article

File(s)

Name

00245.pdf

Size

117.75 KB

Format

Adobe PDF

Checksum

(MD5):38c9474a80aab692dda499f00c38bc51