A Comparative Molecular Dynamics Study of Copper Trench Fill Properties between Ta and Ti Barrier Layer

Resource

Materials Science in Semiconductor Processing 8: 622-629

Journal

Materials Science in Semiconductor

Pages

Processin-g

Date Issued

2005

Date

2005

Author(s)

Yang, J. Y.

Hong, R. T.

Huang, M. J.

URI

Type

journal article

File(s)

Name

6.pdf

Size

320.38 KB

Format

Adobe PDF

Checksum

(MD5):a5d3b967e4630abaf65dddc5dc4770ee