Extremely broad-band semiconductor optical amplifiers
Date Issued
2004-07-31
Date
2004-07-31
Author(s)
DOI
922215E002012
Abstract
By combining different type of quantum wells, we successfully fabricate broad band optical
amplifiers on InP substrates which can be used at communication wavelength. The gain of
this designed device is measured by two-section technique. These broadband amplifiers can
be used as the gain media of broadband wavelength tunable lasers, also. Using our new
amplifier, the laser can simultaneously provide laser output at eight wavelengths at the
communication band.
amplifiers on InP substrates which can be used at communication wavelength. The gain of
this designed device is measured by two-section technique. These broadband amplifiers can
be used as the gain media of broadband wavelength tunable lasers, also. Using our new
amplifier, the laser can simultaneously provide laser output at eight wavelengths at the
communication band.
Subjects
quantum well
optical communication
optical amplifier
multi-wavelength
tunable laser
tunable laser
broadband amplifiers.
Publisher
臺北市:國立臺灣大學光電工程學研究所
Type
report
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