Finite temperature simulation studies of spin-flop magnetic random access memory devices
Journal
Physics Letters A
Journal Volume
353
Journal Issue
4
Pages
345-348
Date Issued
2006
Author(s)
Chui, S. T.
Abstract
Spin-flop structures are currently being developed for magnetic random access memory devices. We report simulation studies of this system. We found the switching involves an intermediate edge-pinned domain state, similar to that observed in the single layer case. This switching scenario is quite different from that based on the coherent rotation picture. A significant temperature dependence of the switching field is observed. Our result suggests that the interplane coupling and thus the switching field has to be above a finite threshold for the spin-flop switching to be better than conventional switching methods. © 2005 Elsevier B.V. All rights reserved.
Type
journal article