Fabrication and characterization of Gallium Nitride microcavities
Date Issued
2005
Date
2005
Author(s)
Lu, Chien-Yao
DOI
en-US
Abstract
In the last decades, gallium nitride materials have drawn much attention and have great potential for the UV-Blue light emitting devices. Due to the disadvantages such as material damages in dry etch, new fabrication processes are needed to enhance the efficiency and lifetime of light emitting devices. This thesis explores the use of wet chemical etching technique as processing tool for GaN – based semiconductors. The general properties of the photo-enhanced chemical (PEC) reaction have been inspected and described in detail for application purpose. Crystallographic etching properties were presented and provided a useful route to different kinds of application. The blue laser diode with distributed Bragg reflectors (DBR) was successfully obtained by the PEC method. In addition, this technique has been used to fabricate GaN microcavities of different geometry and sizes according the crystal nature of GaN. All the fabricated devices were analyzed with optically pumped experiment apparatus. Theoretical investigation of these devices have been proposed and demonstrated in the same thesis. The general conclusions and possible applications in the future were discussed in the last chapter of this work.
Subjects
氮化鎵
微型共振腔
Gallium Nitride
microcavity
Type
thesis
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