Electron-electron interactions in a two-dimensional electron system in an Al0.15Ga0.85N/GaN heterostructure grown on p-type Si
Journal
Journal of the Korean Physical Society
Journal Volume
50
Journal Issue
3
Pages
754-758
Date Issued
2007
Author(s)
Abstract
We report on experimental studies of an Al0.15Ga 0.85N/GaN high-electron-mobility transistor structure grown on a p-type Si (111) substrate. This structure is compatible with complementary metal-oxide-semiconductor (CMOS) technology and, thus, has great potential device applications. The low-temperature magnetoresistivity shows a parabolic dependence on the applied perpendicular magnetic field. This effect is ascribed to electron-electron interaction (EEI) effects in a weakly-disordered two-dimensional system. Our experimental results agree with the EEI theory when the correction term in the ballistic region has been subtracted.
Type
journal article