A 140-GHz Monolithic Low Noise Amplifier

Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
5
Journal Issue
5
Pages
150-152
Date Issued
1995
Author(s)
Wang, H.
Lai, R.
Lo, D.C.W.
Streit, D.C.
Liu, P.H.
Dia, R.M.
Berenz, J.
DOI
URI
URL
Abstract
This paper presents the development of a 140-GHz monolithic low noise amplifier (LNA) using 0.1-μm pseudomorphic InAlAs-InGaAs-InP low noise HEMT technology. A two-stage single-ended 140-GHz monolithic LNA has been designed, fabricated and tested. It exhibits a measured small signal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GHz. This is the highest frequency monolithic amplifier ever reported using three terminal devices.
SDGs

[SDGs]SDG7

Type
journal article

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