A velocity-overshoot capacitance model for 0.1 μm MOS transistors

Resource

Solid-State Electronics 39 (8): 1173-1178

Journal

Solid-State Electronics

Journal Volume

39

Journal Issue

8

Pages

1173-1178

Date Issued

1996

Date

1996

Author(s)

Kuo, J. B.

Chang, Y. W.

Lai, C. S.

URI

Type

journal article

File(s)

Name

02.pdf

Size

514.93 KB

Format

Adobe PDF

Checksum

(MD5):1874011df60c9473e9b05a28220aa719