Steep switch-off of In 0.18 Al 0.82 N/AlN/GaN on Si MIS-HEMT
Journal
2018 7th International Symposium on Next-Generation Electronics
Pages
23.3.1-23.3.4
Date Issued
2018
Author(s)
Chen, P.-G.
Chou, Y.-C.
Gu, S.-S.
Hong, R.-C.
Wang, Z.-Y.
Chen, S.-Y.
Liao, C.-Y.
Tang, M.,
Lee, M.H.
Abstract
InAlN/Al/GaN HEMT directly on Si for steep subthreshold slope (<;60mV/dec) is demonstrated in this study, and is attributed to displacement charge transition effect. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm Indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with 7 magnitudes and a steep SS is also obtained with subthreshold swing (SS) = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep.
SDGs
Type
conference proceedings