Graphene RF transistors with buried bottom gate
Journal
13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’13)
Journal Volume
6489440
Pages
213
Date Issued
2013
Author(s)
Abstract
To improve process induced mobility degradation of graphene, radio frequency (RF) transistors with buried bottom gates have been fabricated and characterized. In this process, graphene is transferred to the top of finished gates and source/drains as almost the very last step of the entire fabrication process. A unit graphene transistor shows the on-current of 130 μA/μm the I on /I off ratio of 5.31, and the maximum transconductance of 6.85μS/μm at V D = 0.1 V. The graphene RF transistor with a channel length of 600 nm shows a maximum oscillation frequency (f max ) of 13 GHz and a cut-off frequency (f T ) of 2 GHz after de-embedding. The higher f max than f T is due to less source-drain resistance (R DS ) made by a fully-covered channel region by the buried gate. Because of the higher f max the proposed device structure can be a promising candidate for graphene RF transistors and RF amplifiers.
Type
conference paper