Design of Millimeter-Wave Multiple-Port Switches and Power Amplifier
Date Issued
2009
Date
2009
Author(s)
Lai, Ruei-Bin
Abstract
This thesis includes the design of millimeter-wave SPDT switches, multiple-port switches, and a medium power amplifier.he first part of the thesis focuses on the basics about how to design RF switches, and then demonstrates two MMW SPDT switches in CMOS process. These two MMW SPDT switches were designed by filter-integrated method. To integrate a switch with filter response can get sharper frequency response and enhance isolation. The CMOS process was adopted since the system on chip (SoC) is a trend in CMOS. One SPDT switch was designed in 65 nm CMOS, and it has an insertion loss about 3-4.5 dB and an isolation better than 20 dB in 40-80 GHz. The other SPDT switch was designed in 90 nm CMOS, and it has an insertion loss of 3-4 dB and isolation better than 25 dB in 60-110 GHz. To our knowledge, it is the highest frequency CMOS MMIC switch.he second part presents a new method to analyze the topology of MMW multiple-port switches. The proposed method is suitable to analyze arbitrary multiple-port switch topology. This method is based on a simplified model of a through path of a multiple-port switch topology. Two 60 GHz multiple-port switches in GaAs HEMT process are demonstrated to verify this analysis. Good agreement with the analysis and the measured results are achieved. he third part presents a 60-GHz medium power amplifier in 65 nm CMOS process. This PA demonstrates a peak gain of 14.5 dB and saturation power of 9.5 dBm.
Subjects
MMW
SPDT
multiple-port
switch
PA
Type
thesis
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