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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect
Details
Floating-body-correlated subthreshold behavior of SOI NMOS device considering back-gate-bias effect
Journal
Spanish Conference on Electron Devices
Date Issued
2015-01
Author(s)
S. K. Hu
J. B. Kuo
Y. J. Chen
JAMES-B KUO
DOI
10.1109/cde.2015.7087450
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/394565
Type
conference paper
