Nanotechnology for Germanium-on-Insulator Structures : Growth, Fabrication, and Material Analysis
Date Issued
2008
Date
2008
Author(s)
Dong, Bo-Chang
Abstract
AbstractGermanium (Ge) has become a widely used material in semiconductor fabrication process in recent years. Compared with the dominating semiconductor material－silicon－in today’s industry, germanium has numerous advantages such as higher carrier mobility, higher absorption coefficient, and good lattice match with GaAs. The germanium-on-insulator (GOI) on silicon substrate technology – a novel semiconductor substrate engineering – can further utilize the superior electrical and optical properties of Ge and also suppress its disadvantages such as high leakage and high cost.In this thesis, we study the SiGe thin film growth mechanism, GOI technology, as well as growth rate/composition characterization. Germanium on insulator fabricated by fully-encapsulated rapid thermal annealing is discussed with details of the original idea, fabrication process, and measurement results. Using this technique, nano-crystal germanium film on insulator can be obtained, and the surface characterization and material analysis are also discussed. Finally, we introduce a novel method to fabricate nano-scale-channel, and the fabricated structure is characterized by focused ion beam (FIB) and scanning-electron-microscopy (SEM). This investigation will enable the development of future high performance electrical and optical devices.ey words : Silicon-Germanium (SiGe), Germanium-on-Insulator (GOI), Fully-Encapsulated Rapid Thermal Annealing, Nano-Scale-Channel
Subjects
Silicon-Germanium (SiGe)
Germanium-on-Insulator (GOI)
Fully-Encapsulated Rapid Thermal Annealing
Nano-Scale-Channel
Type
thesis
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