Optimization of P-type Multi-Stripe Contacts on GaN Light Emitting Diodes with Various P-type Layer Thicknesses
Date Issued
2006
Date
2006
Author(s)
Chiu, Tzu-Yang
DOI
zh-TW
Abstract
We calculate the distribution of current and carrier densities in the GaN based p-type multi-stripe contact LEDs. We also plot LED optical output intensities with various stripe numbers and p-type thicknesses. The high resistivity p-type GaN layer limits current and carrier spreading and thus limits the light extraction from top emitting GaN based LEDs inside the p-type layer with LED light extraction. The thesis provides a numerical method in determining optimum number of metal stripes for various p-type layer thicknesses.
Furthermore, we discuss that the influence of device with and without ion implantation in simulation and experiment. Finally, the results show that the device with ion implantation gets better performances in optical output power and thermal stability.
Subjects
氮化鎵
發光二極體
電流擴散
熱穩定
GaN
LED
Current Spreading
Thermal stability
Type
thesis
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