Low-plasma and high-temperature PECVD grown silicon-rich SiOx film with enhanced carrier tunneling and light emission
Resource
Nanotechnology 18 (39): 395202
Journal
Nanotechnology
Journal Volume
18
Journal Issue
39
Pages
-
Date Issued
2007
Date
2007
Author(s)
Abstract
Low-plasma and high-temperature chemical vapor deposition of Si-rich SiOx for concurrently enhancing the carrier tunneling and light emission efficiency is investigated. The O/Si composition ratio of the SiO x film significantly decreases from 2 to 1.2 as the substrate temperature increases from 200 to 400°C, corresponding to the enhanced precipitation of Si nanocrystals in the Si-rich SiOx. In comparison with stoichiometric SiO2, the Si-L2,3 transition induced kinetic energy loss of the primary electron transmitted through the Si-rich SiOx sample grown at 400°C is red-shifted by 5 eV. The strongest Si nanocrystal related photoluminescence (PL) can be obtained from the Si-rich SiOx film prepared at a threshold plasma power of 30 W and substrate temperature of 400°C. In low-plasma and high-temperature deposited samples, the threshold Fowler-Nordheim (F-N) tunneling field and the indium tin oxide (ITO)-SiOx junction potential barrier height of ITO/SiO x/p-Si/Al metal-oxide-semiconductor light emitting diodes (MOSLEDs) are concurrently reduced due to the increasing density of Si nanocrystals precipitated within the SiOx matrix. A thermal activation energy of 0.8 eV was observed for initiating the F-N tunneling process in the MOSLEDs. The electroluminescence (EL) intensity and efficiency of the MOSLEDs are improved by at least 10 dB due to the oxygen deficient plasma enhanced chemical vapor deposition (PECVD) of Si-rich SiOx at low plasma power and high temperatures. © IOP Publishing Ltd.
Other Subjects
Activation energy; Electroluminescence; Electron tunneling; Energy dissipation; Light emission; Nanocrystals; Photoluminescence; Plasma enhanced chemical vapor deposition; Silica; Stoichiometry; Thin films; Fowler-Nordheim tunneling field; Junction potential barrier; MOSLED; Primary electron; Threshold plasma power; Silicon; metal oxide; nanocrystal; oxygen; silicon; silicon dioxide; tin derivative; article; chemical composition; electron; film; high temperature; light; light emitting diode; luminescence; photoluminescence; plasma; priority journal; sample; stoichiometry; vapor
Type
journal article
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