Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers
Journal
23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
Pages
153-156
ISBN
9784990875312
Date Issued
2016
Author(s)
Hsu S.-M.
Li Y.-S.
Tu M.-S.
He J.-C.
Chiu I.-C.
Chen P.-G.
Lee M.-H.
Chen J.-Z.
Abstract
In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiNx/HfO2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxygen molecules on the back-channel surface by the presence of passivation layers. Under the gate-bias stress of 10 V and -10 V for 10000 s, the threshold voltage shifts for the passivated TFT are 0.75 V and -0.42 V respectively, while the corresponding values for the unpassivated one are 1.24 V and -0.77 V Under the current stress of 2.5 £gA for 10000 s, the threshold voltage shift is -0.29 V for the passivated TFT and -0.63 V for the unpassivated one. ? 2016 FTFMD.
SDGs
Type
conference paper