Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors
Journal
Journal of the Electrochemical Society
Journal Volume
157
Journal Issue
10
Date Issued
2010
Author(s)
Abstract
In this paper, the stacked metal-oxide-semiconductor (MOS) tunneling temperature sensors prepared by a process below are investigated. The temperature responses of the stacked MOS tunneling temperature sensors at high and low temperature regions are not of the same trend. At high temperature, the saturation current of the stacked MOS tunneling temperature sensor may be affected by the Frenkel–Poole (F-P) effect. It was also observed that the thicker the stacked layer in the MOS structure, the higher the effect of the F-P mechanism in the device's temperature response. The stacked MOS tunneling temperature sensors can operate under low voltage and therefore consume less power as compared with pure MOS tunneling temperature sensors.
SDGs
Type
journal article