Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Journal

Microelectronic Engineering

Journal Volume

88

Journal Issue

7

Pages

1207-1210

Date Issued

2011

Author(s)

Chang, Y.C.

Huang, M.L.

Chang, Y.H.

Lee, Y.J.

Chiu, H.C.

Kwo, J.

DOI

10.1016/j.mee.2011.03.098

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443358

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958026432&doi=10.1016%2fj.mee.2011.03.098&partnerID=40&md5=29f70c9577a23840a3b0f86ff6836ffa

Type

conference paper