Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
Journal
International Symposium on VLSI Technology, Systems, and Applications
Pages
141-142
Date Issued
2009
Author(s)
Abstract
Self-aligned inversion-channel In 0.53 Ga 0.47 As n-MOSFETs with ex-situ atomic-layer-deposited Al 2 O 3 and in-situ ultra-high-vacuum deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non dc-embedded current gain cutoff frequency (f T ) and maximum oscillation frequency (f max ) of ~ 3.1 and 1.1 GHz (ALD-Al 2 O 3 ) and of ~ 17.9 and 11.2 GHz (MBE-Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 )), respectively, have been obtained.
Type
conference paper