Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal

International Symposium on VLSI Technology, Systems, and Applications

Pages

141-142

Date Issued

2009

Author(s)

Chiu, H.C.

Lin, T.D.

Chang, P.

Lee, W.C.

Chiang, C.H.

Kwo, J.

Lin, Y.S.

Hsu, S.S.H.

Tsai, W.

DOI

10.1109/VTSA.2009.5159329

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443399

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-77950103851&doi=10.1109%2fVTSA.2009.5159329&partnerID=40&md5=b5b6abfa3a58f14b92fa547d674c41ce

Type

conference paper