DC and AC Analysis of Tri-Gate Fin-FET Device
Date Issued
2006
Date
2006
Author(s)
Hsieh, Bo-Han
DOI
zh-TW
Abstract
This thesis reports an analysis of DC and AC behavior of Tri-Gate Fin-FET (Field Effect Transistor) device.
In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device.
In chapter 2, we discuss the DC phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.
In chapter 3, we discuss the capacitance phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.
Subjects
電容
電晶體
場效電晶體
capacitance
finfet
soi
mosfet
Type
thesis