Transport mechanism of SiGe dot MOS tunneling diodes

Resource

IEEE Electron Device Letters 28 (7): 596-598

Journal

IEEE Electron Device Letters

Journal Volume

28

Journal Issue

7

Pages

596-598

Date Issued

2007

Date

2007

Author(s)

Kuo, P.-S.

Lin, C.-H.

Peng, C.-Y.

Fu, Y.-C.

Liu, C.W.

URI

Type

journal article

File(s)

Name

77.pdf

Size

163.31 KB

Format

Adobe PDF

Checksum

(MD5):70cb500a3e98e0ffcf7bc34ad007f02a