Optical properties of self-assembled InGaAs quantum wires grown on (100) GaAs substrate
Resource
Nanotechnology, 2005. 5th IEEE Conference on
Journal
5th IEEE Conference on Nanotechnology, 2005
Pages
-
Date Issued
2005-07
Date
2005-07
Author(s)
DOI
N/A
Abstract
A method is proposed to grow InGaAs quantum wires on (100) GaAs substrates by solid-source molecular beam epitaxy via Stranski-Krastanov growth mode. The shape of the nano-wire structures are measured by the atomic force microscopy (AFM). Their optical properties are studied by temperature-dependent photoluminescence (PL). The integrated PL intensity at room temperature reduced to 10% of that at 20 K. From 20 to 300 K, the PL peak energy shifts only 70 meV.
SDGs
Type
journal article
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