Oxide roughness effect on tunneling current of MOS diodes

Resource

IEEE Transactions on Electron Devices 49 (12): 2204- 2208

Journal

IEEE Transactions on Electron Devices

Journal Volume

49

Journal Issue

12

Pages

-

Date Issued

2002

Date

2002

Author(s)

Hsu, B.-C.

Chen, K.-F.

Lai, C.-C.

Lee, S.W.

Liu, C.W.

URI

Type

journal article

File(s)

Name

29.pdf

Size

314.13 KB

Format

Adobe PDF

Checksum

(MD5):56a0245054c119a629dbd54c15656e47